PART |
Description |
Maker |
2SC5232 E007767 |
NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS) From old datasheet system GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION
|
TOSHIBA[Toshiba Semiconductor]
|
RN1441 RN1444 E002624 |
MUTING AND SWITCHING APPLICATIONS From old datasheet system
|
Toshiba
|
L2SA2030M3T5G11 |
Low frequency transistor For switching, for muting.
|
Leshan Radio Company
|
2SA1953 2SA195307 |
General Purpose Amplifier Applications Switching and Muting Switch Application
|
Toshiba Semiconductor
|
2SC3327 E000831 |
From old datasheet system NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
|
Toshiba Corporation Toshiba Semiconductor
|
2SA1954 |
TRANSISTOR (GENERAL PURPOSE AMPLIFIER/ SWITCHING AND MUTING SWITCH APPLICATIONS) TRANSISTOR (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)
|
Toshiba Corporation Toshiba Semiconductor
|
2SC3326 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
TOSHIBA
|
HN1C03F |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications
|
TOSHIBA
|
2SC4213 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
TOSHIBA
|
RN1304 RN1306 RN1302 RN1303 RN1305 RN1301 RN1303TE |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
KRC281M KRC286M KRC282M KRC283M KRC284M KRC285M |
CAP, TANT, 100UF, 10%, 16V, E Built in Bias Resistor EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING) (KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR
|
KEC Holdings Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
2SD2704K12 |
For Muting
|
Rohm
|